J-V and C-V characteristic of CdS/CdTe solar cell modelled by SCAPS-1D program

Abstract

In this spectacular work, we have theoretically modelled and experimentally produced a CdS/CdTe thin film heterojunction solar cell using some physical parameters of CdS thin film at 150 nm thickness and a 2.4 eV band gap. The photovoltaic (PV) characteristics of simulated solar cell PV have been determined based on a variety of variables. A spike-like conduction band offset has been formed between CdS and CdTe semiconductors. The PV performance has been negatively impacted (the variation of PV parameters for N_t variation in 10¹⁰-10¹⁸ cm^-3) by some increases in operating temperature, Auger electron recombination coefficient and interface defect density (Nt). It has been observed and interpreted that the efficiency of solar cell is increased as the donor defect density (N_D) in CdS thin film increases.  However, as N_D is increases, the capacitance is slightly decreased, and the voltage built in (V_bi) is also slightly increased. However, the conversion efficiency of solar cell is unaffected by this reduction in capacitance.